Dry Etching Based Silicon Micromachining

The aim of this work is to demonstrate the “dry” etching based micro-fabrication technologies in the manufacturing of Single Crystal Silicon (SCS) for Micro-Electro/(Optical)-Mechanical-Systems (ME(O)MS). The ME(O)MS technology is very fast growing industry branch based often on the same silicon technology as integrated circuits. The process of plasma-dry etching is quite simple straightforward and can be considered as the key technology in the micromachining of silicon. The most important motivation for this work is advancement of the micromachining industry. The basic aspects of pattern transfer of the prepared resistpatterns by plasma etching into the substrate, considering plasma chemistry, gas flow or gas chopping, and substrate temperature will be presented. Special attention will be given to discuss the physical and chemical phenomena which are involved in the generation of features with high aspect ratios.